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Volumn 15, Issue 4, 1997, Pages 2074-2080

Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy

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[No Author keywords available]

Indexed keywords


EID: 0031522454     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580611     Document Type: Article
Times cited : (26)

References (31)
  • 12
    • 0001417580 scopus 로고
    • V. L. Berkovits and D. Paget, Appl. Phys. Lett. 61, 1835 (1992); D. Paget, V. L. Berkovits, and A. O. Gusev, J. Vac. Sci. Technol. A 13, 2368 (1995).
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1835
    • Berkovits, V.L.1    Paget, D.2
  • 15
    • 0000140599 scopus 로고    scopus 로고
    • D. Paget, J. E. Bonnet, V. L. Berkovits, P. Chiaradia, and J. Avila, Phys. Rev. B 53, 4604 (1996); D. Paget, A. O. Gusev, and V. L. Berkovits, ibid. 53, 4615 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 4615
    • Paget, D.1    Gusev, A.O.2    Berkovits, V.L.3
  • 24
    • 85033187847 scopus 로고    scopus 로고
    • note
    • This value is derived from two independent measurements. Golsdtein (Ref. 19) has performed a calibration using cesium adsorption on Ge. Van Bommel et al. (Ref. 20) measure the cesium flux impinging on the sample, and derive the cesium concentration at the change of the sticking coefficient.
  • 26
    • 85033175724 scopus 로고    scopus 로고
    • note
    • This also indicates that parts of the surface characterized by the (111) orientation, which may exist on sulfide-passivated surfaces due to anisotropic etching (Ref. 25), do not play a significant role, as these parts do not contribute to the observed RA signals. For p-type material, this etching has indeed been shown to be very small (Ref. 26), so that its effect should be limited.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.