Anodisation-related structural variations of porous silicon nanostructures investigated by photoluminescence and Raman spectroscopy

Applied Surface Science

Volumn 206, Issue 1-4, 2003, Pages 37-45

  Ben Younes, O ^a   Oueslati, M ^a   Bessais B ^b  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

Author keywords

Nanocrystallites; Photoluminescence; Porous silicon; Raman scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WIRES;

STRUCTURAL VARIATIONS;

POROUS SILICON;

EID: 0037441074     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00800-0     Document Type: Article

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