메뉴 건너뛰기




Volumn 103, Issue 1-2, 2003, Pages 253-262

Igniters and temperature sensors for a micro-scale combustion system

Author keywords

Electrical interconnect; Igniters; Power MEMS; Temperature sensors

Indexed keywords

ANNEALING; ELECTRIC CONTACTS; ENGINES; FINITE ELEMENT METHOD; GAS TURBINES; GRAIN GROWTH; IGNITION; MICROELECTROMECHANICAL DEVICES; MICROPROCESSOR CHIPS; MICROSENSORS; POLYSILICON; RESISTORS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SILICON WAFERS; THIN FILMS;

EID: 0037438992     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(02)00344-8     Document Type: Conference Paper
Times cited : (13)

References (16)
  • 2
    • 84959369559 scopus 로고    scopus 로고
    • Aerothermal challenges in the design of a microfabricated gas turbine engine
    • Albuquerque, NM, June 15-18
    • S.A. Jacobson, Aerothermal challenges in the design of a microfabricated gas turbine engine, in: Proceedings of the 29th AIAA Fluid Dynamics Conference, Albuquerque, NM, June 15-18, 1998.
    • (1998) Proceedings of the 29th AIAA Fluid Dynamics Conference
    • Jacobson, S.A.1
  • 4
    • 0345325567 scopus 로고    scopus 로고
    • Mirofabrication of high temperature silicon devices using wafer bonding and deep reactive ion etching
    • A. Mehra, A.A. Ayon, I.A. Waitz, M.A. Schmidt, Mirofabrication of high temperature silicon devices using wafer bonding and deep reactive ion etching, J. Microelectromech. Syst. 8 (2) (1999) 152-160.
    • (1999) J. Microelectromech. Syst. , vol.8 , Issue.2 , pp. 152-160
    • Mehra, A.1    Ayon, A.A.2    Waitz, I.A.3    Schmidt, M.A.4
  • 6
    • 0034266761 scopus 로고    scopus 로고
    • Through-wafer electrical interconnect for multilevel microelectromechanical system devices
    • A. Mehra, X. Zhang, A.A. Ayon, I.A. Waitz, M.A. Schmidt, Through-wafer electrical interconnect for multilevel microelectromechanical system devices, J. Vac. Sci. Technol. B 18 (5) (2000) 2583-2589.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , Issue.5 , pp. 2583-2589
    • Mehra, A.1    Zhang, X.2    Ayon, A.A.3    Waitz, I.A.4    Schmidt, M.A.5
  • 7
    • 0032023866 scopus 로고    scopus 로고
    • Investigation of high temperature degradation of platinum thin films with an in-situ resistance measurement apparatus
    • S.L. Firebaugh, K.F. Jensen, M.A. Schmidt, Investigation of high temperature degradation of platinum thin films with an in-situ resistance measurement apparatus, J. Microelectromech. Syst. 7 (1) (1998) 128-135.
    • (1998) J. Microelectromech. Syst. , vol.7 , Issue.1 , pp. 128-135
    • Firebaugh, S.L.1    Jensen, K.F.2    Schmidt, M.A.3
  • 10
    • 0026923119 scopus 로고
    • A CMOS thermally-isolated heated structure as a substrate for semiconductor gas sensors
    • S. Wessel, M. Parameswaran, S.R. Morrison, R.F. Frindt, A CMOS thermally-isolated heated structure as a substrate for semiconductor gas sensors, Electron. J. 23 (6) (1992) 451-456.
    • (1992) Electron. J. , vol.23 , Issue.6 , pp. 451-456
    • Wessel, S.1    Parameswaran, M.2    Morrison, S.R.3    Frindt, R.F.4
  • 12
    • 0020798958 scopus 로고
    • Imerpretation of DC characteristics of phosphorus-doped polycrystalline silicon films: Conduction across low-barrier grain boundaries
    • E. Loh, Imerpretation of DC characteristics of phosphorus-doped polycrystalline silicon films: conduction across low-barrier grain boundaries, J. Appl. Phys. 54 (8) (1983) 4463-4466.
    • (1983) J. Appl. Phys. , vol.54 , Issue.8 , pp. 4463-4466
    • Loh, E.1
  • 13
    • 0018480859 scopus 로고
    • Phosphorus doping of low pressure chemically vapor-deposited silicon films
    • M.M. Mandurah, K.C. Saraswat, Phosphorus doping of low pressure chemically vapor-deposited silicon films, J. Electrochem. Soc. 126 (6) (1979) 1019-1023.
    • (1979) J. Electrochem. Soc. , vol.126 , Issue.6 , pp. 1019-1023
    • Mandurah, M.M.1    Saraswat, K.C.2
  • 14
    • 0020128446 scopus 로고
    • Electrical characteristics of heavily arsenic and phosphorus doped polycrystalline silicon
    • J. Murota, T. Sawai, Electrical characteristics of heavily arsenic and phosphorus doped polycrystalline silicon, J. Appl. Phys. 53 (5) (1982) 3702-3708.
    • (1982) J. Appl. Phys. , vol.53 , Issue.5 , pp. 3702-3708
    • Murota, J.1    Sawai, T.2
  • 15
    • 0019354162 scopus 로고
    • Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermally annealing
    • T. Makino, H. Nakamura, Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermally annealing, Solid-State Electron. 24 (1981) 49-55.
    • (1981) Solid-State Electron. , vol.24 , pp. 49-55
    • Makino, T.1    Nakamura, H.2
  • 16
    • 0020168007 scopus 로고
    • Electrical properties of thermally and laser-annealed polycrystalline silicon films heavily doped with arsenic and phosphorus
    • S. Solmi, M. Severi, R. Angelucci, L. Baldi, R. Bilenchi, Electrical properties of thermally and laser-annealed polycrystalline silicon films heavily doped with arsenic and phosphorus, J. Electrochem. Soc. 129 (8) (1982) 1811-1818.
    • (1982) J. Electrochem. Soc. , vol.129 , Issue.8 , pp. 1811-1818
    • Solmi, S.1    Severi, M.2    Angelucci, R.3    Baldi, L.4    Bilenchi, R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.