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Volumn 67, Issue 3, 2003, Pages

Energy levels of isoelectronic impurities by large scale LDA calculations

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CADMIUM; GALLIUM; NITROGEN; SULFUR; TELLURIUM;

EID: 0037438137     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.033102     Document Type: Article
Times cited : (22)

References (27)
  • 10
    • 0001698673 scopus 로고    scopus 로고
    • An-Ban Chen and B. Segall, Phys. Rev. B 12, 600 (1975)
    • An-Ban Chen and B. Segall, Phys. Rev. B 12, 600 (1975).
  • 11
    • 0000894891 scopus 로고    scopus 로고
    • An-Ban Chen and A. Sher, Phys. Rev. B 22, 3886 (1980)
    • An-Ban Chen and A. Sher, Phys. Rev. B 22, 3886 (1980).
  • 15
    • 0001058999 scopus 로고    scopus 로고
    • S.-H. Wei, S. B. Zhang, and A. Zunger, J. Appl. Phys. 87, 1304 (2000)
    • S.-H. Wei, S. B. Zhang, and A. Zunger, J. Appl. Phys. 87, 1304 (2000).
  • 16
    • 0001428924 scopus 로고    scopus 로고
    • S.-H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998)
    • S.-H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998).
  • 17
    • 85038327733 scopus 로고    scopus 로고
    • http://www.nersc.gov/(Formula presented)linwang/PEtot/PEtot.html
    • http://www.nersc.gov/(Formula presented)linwang/PEtot/PEtot.html
  • 21
    • 0000469409 scopus 로고    scopus 로고
    • S.-H. Wei and A. Zunger, Phys. Rev. B 60, 5404 (1999)
    • S.-H. Wei and A. Zunger, Phys. Rev. B 60, 5404 (1999).
  • 23
    • 85038284065 scopus 로고    scopus 로고
    • For ZnS:Te, we are unable to calculate the 512-atom system. However, we estimate that its “strain-relaxation” correction to CPM is small, since its wave function spreads out to the whole 512-atom unit cell. Besides, the spin-orbit interaction effect is included in this system, which increases (Formula presented) by about 10 meV
    • For ZnS:Te, we are unable to calculate the 512-atom system. However, we estimate that its “strain-relaxation” correction to CPM is small, since its wave function spreads out to the whole 512-atom unit cell. Besides, the spin-orbit interaction effect is included in this system, which increases (Formula presented) by about 10 meV.
  • 24
    • 85038317506 scopus 로고    scopus 로고
    • W. M. Jadwisienczak and H. J. Lozykowski, in Nitride Semiconductors, edited by F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 1033
    • W. M. Jadwisienczak and H. J. Lozykowski, in Nitride Semiconductors, edited by F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 1033.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.