A medium energy ion scattering analysis of the Si-SiO 2 interface formed by ion beam oxidation of silicon

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 207-211

  Kim, Young Pil ^a   Choi, Si Kying ^a   Ha, Yong Ho ^a   Kim, Sehun ^a   Kim, Hyun Kyong ^b   Moon, Dae Won ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Defects; Ion beam oxidation; Medium energy ion scattering spectroscopy; Si SiO 2 interface; SOI

Indexed keywords

AMORPHIZATION; ANNEALING; ATOMS; CRYSTAL DEFECTS; ION BEAMS; ION BOMBARDMENT; OXIDATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEIS);

INTERFACES (MATERIALS);

EID: 0031548155     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80080-3     Document Type: Article

References (22)

1. K. Wittmaack, Surf. Sci. 112 (1981) 168.
2. J.P. Colinge, Silicon on Insulator Technology: Materials to VLSI, Kluwer Academic, MA, 1991.
3. S.M. Hues, P. Williams, Nucl. Instr. Meth. B 15 (1986) 206.
4. P. Williams, J.E. Backer, Nucl. Instr. Meth. B 182/183 (1981) 15.
5. V.R. Deline, W. Reuter and R. Kelly, in: R.J. Benninghoven, D.S. Colton, Simons and H.W. Werner (Eds.), SIMS V, Springer, Berlin, 1986, p. 299.
6. K. Wittmaak, Appl. Phys. Lett. 48 (1986) 1400.
7. C.J. Vriezena, K.T.F. Janssen, P.R. Boudewijn, Appl. Phys. Lett. 54 (1989) 1981.
8. G.W. Cullen, M.T. Duffy and A.C. Ipri, in: S. Cristoloveanu (Ed.), Proc. of the 6th Int. Symp. on Silicon on Insulator Technology and Devices, Vol. 94-11, Electrochem. Soc., New Jersey, 1994, p. 5.
9. J. Margail, J.M. Lamure, A.M. Papon, Mater. Sci. Eng. B 12 (1992) 27.
10. S.D. Littlewood, J.A. Kilner, J. Appl. Phys. 63 (1988) 2173.
11. J.S. Williams, M. Petravic, B.G. Svensson, M. Conway, J. Appl. Phys. 76 (1994) 1840.
12. B. Brijs, W. De Coster, H. Bender, W. Storm, P. Osiceanu, W. Vandervorst, Nucl. Instr. Meth. B 99 (1995) 614.
13. J.L. Alay, W. Vandervorst, Phys. Rev. B 50 (1994) 15015.
14. J.C. Lee, C.S. Chung, H.J. Kang, Y.P. Kim, H.K. Kim, D.W. Moon, J. Vac. Sci. Technol. A 13 (1995) 1325.
15. J.F. van der Veen, Surf. Sci. Rep. 5 (1985) 199.
16. B.S. Swartzentruber, Y.W. Mo, M.B. Webb, M.G. Lagally, J. Vac. Sci. Technol. A 7 (1989) 2901.
17. Y. Kido, J. Kawamoto, J. Appl. Phys. 61 (1987) 956.
18. Y. Kido, T. Koshikawa, J. Appl. Phys. 67 (1990) 187.
19. L.C. Feldman, J.W. Rodgers, J. Appl. Phys. 41 (1970) 3776.
20. F.M. Ross, J.M. Gibson, R.D. Twesten, Surf. Sci. 310 (1994) 234.
21. Y.P. Kim, S.K. Choi, Y.H. Ha, S. Kim, H.K. Kim and D.W. Moon, J. Vac. Sci. Technol. A, to be submitted.
22. H.J. Kang, E. Kawatoh, R. Shimizu, Jpn. J. Appl. Phys. 24 (1985) 1409.