Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy

Journal of Crystal Growth

Volumn 169, Issue 1, 1996, Pages 181-184

  Udono, Haruhiko ^a   Motogaito, Atsushi ^a   Kimura, Masakazu ^a   Tanaka, Akira ^a   Sukegawa, Tokuzo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTAL STRUCTURE; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SUPERSATURATION; TWINNING;

COMPOSITIONAL CONVERSION; GALLIUM PHOSPHIDE; HETEROEPITAXIAL GROWTH; TWIN;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030288094     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00466-6     Document Type: Article

References (9)

1. T. Sukegavva, H. Udono, M. Kimura, H. Katsuno and A. Tanaka, Jpn. J. Appl. Phys, 32 (1993) L1164.
2. H. Udono, H. Katsuno, A. Tanaka and T. Sukegawa, Jpn. J. Appl. Phys. 32, Suppl. 32-3 (1993) 735.
3. M. Ettenberg, S.H. Mcfarlane and S.L. Gilbert, Proc. 4th Int. Symp. on GaAs and Related Compounds, 17 (1972) 29.
4. T.G. van Oirschot, Appl. Phys. Lett. 24 (1974) 211.
5. J.M. Woodall, R.M. Potemski, S.E. Blum and R. Lynch, Appl. Phys. Lett. 20 (1972) 375.
6. M. Ettenberg and S.H. McFarlane III, J. Crystal Growth 23 (1974) 233.
7. M.G. Astles and M.C. Rowland, J. Crystal Growth 27 (1974) 142.
8. K. Tomita, F. Kitagawa, H. Kano and M. Hashimoto, J. Crystal Growth 115 (1991) 299.
9. Yu.B. Bolkhovityanov, J. Crystal Growth 55 (1981) 591.