UV light induced defects in amorphous silicon thin films

Vacuum

Volumn 71, Issue 1-2 SPEC., 2003, Pages 135-139

  Pivac, B ^a   Pavlovic M ^a   Kovacevic I ^a   Etlinger, B ^a   Zulim, I ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b UNIVERSITY OF SPLIT   (Croatia)

Author keywords

Deep level transient spectroscopy; Defects; Oxygen; Photoconductivity; Silicon

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; OXIDATION; PHOTOCONDUCTIVITY; RAPID THERMAL ANNEALING; ULTRAVIOLET RADIATION;

LIGHT SOAKING;

THIN FILMS;

EID: 0037427430     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00727-3     Document Type: Conference Paper

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