Electrical properties of TiO2 films deposited on strained Si1-yCy layers

Electronics Letters

Volumn 39, Issue 3, 2003, Pages 323-324

  Dalapati, G K ^a   Chatterjee, S ^a   Samanta, S K ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HOLE MOBILITY; MOS CAPACITORS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TITANIUM DIOXIDE;

METAL INSULATOR SEMICONDUCTOR CAPACITORS;

THIN FILMS;

EID: 0037421784     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030210     Document Type: Article

References (6)

1. MAITI, C.K., CHAKRABARTI, N.B., and RAY, S.K.: 'Strained silicon heterostructures: materials and devices' (IEE, UK, 2001)
2. y layers', IEEE Electron Device Lett., 1999, 20, pp. 338-340
3. 2)-based gate insulators', IBM J. Res. Dev., 1999, 43, pp. 383-392
4. y films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition', Thin Solid Films, 1997, 294, pp. 149-152
5. HILL, W.A., and COLEMAN, C.C.: 'A single frequency approximation for interface-state density determination', Solid-State Electron., 1980, 23, pp. 987-993
6. 2O ambients', J. Vac. Sci. Technol., 1996, 14, pp. 1706-1711