Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Vacuum

Volumn 70, Issue 4, 2003, Pages 511-522

  Sridharan, M ^a   Narayandass, Sa K ^a   Mangalaraj, D ^a   Lee, Hee Chul ^b  

^a BHARATHIAR UNIVERSITY   (India)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Optical properties; Photoluminescence; Raman scattering; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CRYSTAL ORIENTATION; ION IMPLANTATION; OPACITY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RAMAN SCATTERING; SUBSTRATES; SURFACE ROUGHNESS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

POLYCRYSTALLINE THIN FILMS;

THIN FILMS;

EID: 0037418709     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00703-0     Document Type: Article

References (48)

1. Yoder-Short D.R., Debska U., Frudyna J.K. J Appl Phys. 58:1985;4056.
2. Peters M.G., Fahrenbruch A.L., Bube R.H. J Vac Sci Technol A. 6:1988;3098.
3. Sen S., Konkel W.H., Tighe S.J., Bland L.G., Sharma S.R., Taylor R.E. J Cryst Growth. 86:1988;111.
4. Thio T., Bennett J.W., Chadi D.J., Linke R.A., Beela P. J Cryst Growth. 159:1996;345.
5. Lee T.S., Choi K.K., Jeoung Y.T., Kim H.K., Kim J.M., Kim Y.H., Chang J.M., Song W.S., Kim S.U., Park M.J., Lee S.D. J Electronic Mater. 26(6):1997;552.
6. Lee T.S., Jyoung Y.T., Kim H.K., Kim J.M., Song S.J., Ann S.Y., Lee Y.J., Kim Y.H., Kim S.U., Park M.J., Lee S.D., Suh S.H. Proc SPIE. 3436(1):1998;67.
7. Jaesun Lee, Gills N.C. J Appl Phys. 78(2):1995;1191.
8. Sigmon T.W. Nucl Instrum Methods B. 7/8:1985;402.
9. Destefanis G.L. Nucl Instrum Methods. 209/210:1983;567.
10. Bubulac L.O., Lo D.S., Tennant W.E., Edwall D.D., Robinson J.C. J Vac Sci Technol A. 4(4):1986;2169.
11. Cotton V.A., Wilson J.A. J Vac Sci Technol A. 4(4):1986;2177.
12. Ivanda M., Heartmann I., Kiefer W. Phys Rev B. 51:1995;1567.
13. Peercy P.S. Appl Phys Lett. 18:1971;574.
14. Nakamura T., Katoda T. J Appl Phys. 53:1982;5870.
15. Rama Rao C.S., Sundaram S., Schmidt R.L., Comas J. J Appl Phys. 54:1983;1808.
16. Kim S.G., Asahi H., Seta M., Takizawar T., Emura S., Soni R., Gonda S., Temoue H. J Appl Phys. 74:1993;579.
17. Schaake H.F. J Vac Sci Technol A. 4(4):1986;2174.
18. Biersack J.P., Haggmark L.G. Nucl Instrum Method. 174:1980;257.
19. Bowman R.C., Alt R.L., Adams P.M., Knudson J.F., Jamieson D.N., Downing R.G. J Cryst Growth. 86:1998;768.
20. Saarilathi J., Rauhala E. Nucl Instrum Method B. 64:1992;734.
21. Prasada Rao K., Hussain O.Md., Reddy K.T.R., Reddy P.S., Uthanna S., Naidu B.S., Jayarama Reddy P. Opt Mater. 5:1996;63.
22. Soliman H.S., Allan E.M., El-Shazly A.A. J Mater Sci Electronic. 7:1996;233.
23. Ibrahim A.M. Vacuum. 48(1):1998;5.
24. Manifacier J.C., Gasiot J., Fillard J.P. J Phys E. 9:1976;1002.
25. Pal U., Silva-Gonzalez R., Martinez-Montes G., Gracia-Jimenez M., Vidal M., Torres S. Thin Solid Films. 305:1997;345.
26. Choudhuri S., Das S.K., Pal A.K. Thin Solid Films. 147:1987;9.
27. Khawaja, Tomlin S.G. J Phys D: Appl Phys. 8:1975;581.
28. Giles-Taylor N.C., Bicknell R.N., Blanks D.K., Myers T.H., Schetzina J.F. J Vac Sci Technol A. 3:1985;76.
29. Mikkelsen C., Boyce J.B. Phys Rev Lett. 49:1982;1412.
30. Giles-Taylor N.C., Bicknell R.N., Blanks D.K., Myers T.H., Schetzina J.F. J Vac Sci Technol A. 3:1985;76.
31. Molva, Saminadayar K., Pautrat J.L., Ligeon E. Solid State Commun. 48:1983;955.
32. Mar H.A., Salanskg N. J Appl Phys. 56:1984;2369.
33. Choyke WJ, Burke MG, Feng ZC, Hanes M, Mascarenhas A. In: Von Bardeleben HJ, editor. Defects in semiconductors, vol. 10-11. New York: Schetzina, 1986. p. 769.
34. Doty F.P., Butler J.F., Schetzina J.F., Bowers A.K. J Vac Sci Technol B. 10(4):1992;1418.
35. Narayanan K.L., Vijayakumar K.P., Nair K.G.M., Sundarakannan B., Narasimha Rao G.V., Kesavamoorthy R. Nucl Instrum Methods B. 132:1997;61.
36. Narayanan K.L., Vijaya Kumar K.P., Nair K.G.M., Thampi N.S. Physica B. 240:1997;8.
37. Cody G.D., Tiedje T., Abeles B., Goldstein Y. Phys Rev Lett. 47:1981;1480.
38. Shiraki Y., Shimada T., Komatsubara K.F. J Appl Phys. 43:1972;710.
39. Islam S.S., Rath S., Jain K.P., Abbi S.C. Phys Rev B. 46:1992;4982.
40. Pine A.S., Dresselhaus G. Phys Rev B. 4:1971;356.
41. Harada H., Narita S. J Phys Soc Japan. 30:1970;1628.
42. Motooka T., Holland O.W. Appl Phys Lett. 61:1992;3005.
43. Liete R.C.C., Scott J.F., Damem T.C. Phys Rev B. 22:1969;780.
44. Narayanan K.L., Vijayakumar K.P., Nair K.G.M., Kesavamoorthy R. Phys Stat Sol A. 164:1997;725.
45. Sridharan M, Narayandass SAK, Mangalaraj D, Hee Chul Lee. Vacuum 2002;68/2:119.
46. Metiu H. Prog Surf Sci. 17:1984;153.
47. Garcia F.J., Pendry J.B. Phys Rev Lett. 77(6):1996;1163.
48. Fleishmann M. Chem Phys Lett. 26:1974;163.