Wideband CMOS transimpedance amplifier

Electronics Letters

Volumn 39, Issue 7, 2003, Pages 587-588

  Kossel, M ^a   Menolfi, C ^a   Morf, T ^a   Schmatz, M ^a   Toifl, T ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; ELECTRIC POWER UTILIZATION; GAIN CONTROL;

TRANSIMPEDANCE GAIN;

AMPLIFIERS (ELECTRONIC);

EID: 0037417395     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030398     Document Type: Article

References (4)

1. SCHAFBAUER, T., et al.: 'Integration of high-performance, low-leakage and mixed signal feature into a 100 nm CMOS technology'. Symp. VLSI Technology, Dig. Tech. Ppr, Honolulu, USA, 2002
2. ROOMAN, C., COPPEE, D., and KUIJK, M.: 'Asynchronous 250-Mb/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications', IEEE J Solid-State Circuits, 2000, 35, (7), pp. 953-958
3. TOUMAZOU, C., and PARK, S.M.: 'Wideband low-noise CMOS transimpedance amplifiers for gigahertz operation', Electron. Lett., 1996, 32, (13), pp. 1194-1196
4. MOHAN, S., DEL MAR HERSHENSON, M., BOYD, S., and LEE, T.: 'Bandwidth extension in CMOS with optimized on-chip inductors', IEEE J. Solid-State Circuits, 2000, 35, (3), pp. 346-355