Modeling of arsenic transient enhanced diffusion and background boron segregation in low-energy As+ implanted Si

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 523-525

  Kim, R ^a   Aoki, T ^a   Hirose, T ^a   Furuta, Y ^a   Hayashi, S ^a   Shano, T ^a   Taniguchi, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BINDING ENERGY; BORON; DIFFUSION; ION IMPLANTATION; MOSFET DEVICES;

BORON SEGREGATION; TRANSIENT ENHANCED DIFFUSION (TED);

SILICON;

EID: 0034453532     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)