Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs (0 0 1)

Journal of Luminescence

Volumn 102-103, Issue SPEC, 2003, Pages 712-714

  Kidalov, V V ^a   Sukach, G A ^b   Petukhov, A O ^a   Revenko, A S ^a   Potapenko, E P ^b  

^a BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Cubic GaN; High frequency discharge; Photoluminescence; Porous GaAs; Radical beam gettering epitaxy; X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; POROUS MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

RADICAL-BEAM GETTERING EPITAXY (RBGE);

THIN FILMS;

EID: 0037402572     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00629-4     Document Type: Conference Paper

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