Improvement of crystalline quality of 3-inch InP wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 972-976

  Gondet, S ^a   Duffar, T ^b   Jacob, G ^a   Van Den Bogaert, N ^c   Louchet, F ^d  

^a InPACT SA   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^d GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

EPD; InP; LEC; Simulation; Thermal shield; Thermal stress; XRD

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); HEAT TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; THERMAL GRADIENTS; THERMAL STRESS; THERMOMECHANICAL TREATMENT; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; ETCH PITS DENSITY; FLUID DYNAMIC ANALYSIS PACKAGE; THERMAL SHIELD;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032662997     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.972     Document Type: Article

References (4)

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2. F. Dupret, Y. Ryckmans, M. Wouters, and M. J. Crochet: J. Cryst. Growth 79 (1986) 84.
3. R. Assaker, N. Van den Bogaert and F. Dupret: CESAME, Universite Catholique de Louvain, Tech. Note 94. 75 (1990).
4. S. Shah, J. Chauduri, M. Mier and D. C. Look: J. Mater. Sci. 25 (1990) 4298.