Persistent photoconductivity in ZnCdSe MBE films grown on GaAs

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 759-762

  Hernandez L ^a,b   Rivera Alvarez, Z ^a   Hernandez Ramirez L M ^a   Hernandez Calderon I ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITY OF HAVANA   (Cuba)

Author keywords

DX center; Persistent photoconductivity; TSC; ZnCdSe GaAs heterojunction

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRON TRAPS; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; ZINC ALLOYS;

PHOTOEXCITATION;

THIN FILMS;

EID: 0037395594     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00341-6     Document Type: Article

References (10)

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