Ferroelectric properties of Pb(Zr,Ti)O3 heterolayered thin films for FRAM applications

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 662-669

  Kim, Kyoung Tae ^a   Kim, Chang Il ^a   Lee, Sung Gap ^b  

^a Chung Ang University   (South Korea)

^b Seonam University   (South Korea)

Author keywords

Ferroelectric; FRAM; Heterostructures; PZT; Sol gel

Indexed keywords

CURRENT DENSITY; DIELECTRIC LOSSES; FERROELECTRICITY; LEAD COMPOUNDS; LEAKAGE CURRENTS; MICROSTRUCTURE; POLARIZATION; SPIN COATING;

HETEROLAYERED THIN FILMS;

THIN FILMS;

EID: 0037395039     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00980-2     Document Type: Conference Paper

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