Potassium reaction on sulfur-passivated GaAs(100)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 5, 2000, Pages 2513-2516

  Seo, J M ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPOSITION; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); PASSIVATION; POTASSIUM; SCHOTTKY BARRIER DIODES; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY CONTACTS; VALENCE BANDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034272655     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1286390     Document Type: Article

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19. The amount of evaporated K, either 3 or 10 Å, is the monitored value by the thickness monitor during K evaporation (that is nominal coverage), and the indicated thickness does not imply that of the uniform K overlayer. As shown in the inset of Figs. 3 and 6, the SAES intensity does not decrease exponentially, using 3 and 10 Å as two points of evaporated surfaces and the annealed one as that of the unevaporated surface. These trends were the same for both Ga- and As-AES intensity variations, too. Therefore, it can be deduced that K does not grow in a layer-by-layer fashion.