Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(0 0 1)

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 161-165

  Hasegawa, Shigehiko ^a   Suekane, Osamu ^a   Takata, Masahiro ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Nanostructures; A1. Nucleation; A3. Molecular beam epitaxy; B1. Arsenides; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

CAPPING LAYERS; OVERGROWTH;

SEMICONDUCTOR GROWTH;

EID: 0037381457     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02403-X     Document Type: Conference Paper

References (12)

1. Nabetani Y., Ishikawa T., Noda S., Sasaki A. J. Appl. Phys. 76:1994;347.
2. Lee H., Lowe-Webb R., Yang W., Sercel P.C. Appl. Phys. Lett. 72:1998;812.
3. Solomon G.S., Trezza J.A., Harris J.S. Jr. Appl. Phys. Lett. 66:1995;3161.
4. Hasegawa Y., Kiyama H., Xue Q.K., Sakurai T. Appl. Phys. Lett. 72:1998;2265.
5. Hasegawa S., Arakawa K., Tanaka M., Nakashima H. J. Crystal Growth. 227/228:2001;1029.
6. Suekane O., Hasegawa S., Takata M., Okui T., Nakashima H. Mater. Sci. Eng. B. 88:2002;158.
7. Suekane O., Hasegawa S., Takata M., Okui T., Nakashima H. Appl. Surf. Sci. 190:2002;218.
8. Márquez J., Geelhaar L., Jacobi K. Appl. Phys. Lett. 78:2001;2309.
9. Wu W., Tucker J.R., Solomon G.S., Harris J.S. Jr. Appl. Phys. Lett. 71:1997;1083.
10. Lita B., Goldman R.S., Phillips J.D., Bhattacharya P.K. Appl. Phys. Lett. 74:1999;2824.
11. Flebbe O., Eisele H., Kalka T., Heinrichsdorff F., Krost A., Bimberg D., Dähne-Prietsh M. J. Vac. Sci. Technol. B. 17:1999;1639.
12. Grandidier B., Niquet Y.M., Legrand B., Nys J.P., Priester C., Stiévenard D., Gérard J.M., Thierry-Mieg V. Phys. Rev. Lett. 85:2000;1068.