Enhancement-mode InAs n-channel high electron mobility transistors using beryllium sheet doping

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 57-61

  Zhao, Y ^a   Jurkovic, M J ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTORS (E-HEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031620334     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Luo, L. F., Beresford, R., Wang, W. I. and Munekata, H., Appl. Phys. Lett., 1989, 55, 789.
2. Tong, M., Nummila, K., Seo, J.-W., Ketterson, A. and Adesida, I., Electron. Lett., 1992, 28, 1633.
3. Fulkerson, D. E., Baier, S., Nohava, J. and Hochhalter, R., Solid-State Electron., 1996, 39, 461.
4. LaRue, G. S. and Grider, D. E., GaAs IC Symp., 1992, 89 pp.
5. Grider, D. E., Mactaggart, I. R., Nohava, J. C., Stronczer, J. J., Ruden, P. P., Nohava, T. E., Fulkerson, D. and Tetzlaff, D. E., GaAs IC Symp., 1991, 71 pp.
6. Boos, J. B., Kruppa, W., Park, D., Molnar, B. and Bennett, B. R., Electron Lett., 1996, 32, 688.
7. Bolognesi, C. R., Caine, E. J. and Kroemer, H., IEEE Electron Device Lett., 1994, 15, 16.
8. Li, X., Longenbach, K. F., Wang, Y. and Wang, W. I., IEEE Electron Device Lett., 1992, 13, 192.
9. Furukawa, A., Appl. Phys. Lett., 1993, 62, 3150.
10. Shen, J., Goronkin, H., Dow, J. D. and Ren, S. Y., J. Vac. Sci. Technol. B, 1995, 13, 1736.
11. Ideshita, S., Furukawa, A., Mochizuki, Y. and Mizuta, M., Appl. Phys. Lett., 1992, 60, 2549.
12. Shen, J., Dow, J. D., Ren, S. Y., Tehrani, S. and Goronkin, H., J. Appl. Phys., 1993, 73, 8313.
13. Nguyen, C., Brar, B., Kroemer, H. and English, J. H., Appl. Phys. Lett., 1992, 60, 1854.
14. Suehiro, H., Miyata, T., Kuroda, S., Hara, N. and Takikawa, M., IEEE Trans. Electron Device, 1994, 41, 1742.
15. Tong, M., Nummila, K., Seo, J.-W., Ketterson, A. and Adesida, I., Electron Lett., 1992, 28, 1633.
16. Bahl, S. R. and Del Alamo, J. A., IEEE Electron Device Lett., 1992, 13, 195.
17. Zhao, Y., Jurkovic, M. J. and Wang, W. I., J. Electrochem. Soc., 1997, 144, 1067.
18. Asif Khan, M., Chen, Q., Sun, C. J., Yang, J. W., Blasingame, M., Shur, M. S. and Park, H., Appl. Phys. Lett., 1996, 68, 514.