Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 481-488

  Palfinger, G ^a   Bitnar, B ^a   Sigg, H ^a   Muller E ^a   Stutz, S ^a   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Optical absorption; Optical properties of quantum wells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ENERGY GAP; LIGHT ABSORPTION; LIGHT REFLECTION; NANOSTRUCTURED MATERIALS; PHOTONS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS;

THERMOPHOTOVOLTAICS;

SEMICONDUCTING SILICON;

EID: 0037370440     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00653-7     Document Type: Conference Paper

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