Calculation of critical layer thickness versus lattice mismatch for Ge xSi1-x/Si strained-layer heterostructures

Applied Physics Letters

Volumn 47, Issue 3, 1985, Pages 322-324

  People, R ^a   Bean, J C ^a  

^a LUCENT TECHNOLOGIES   (United States)

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EID: 21544464728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.96206     Document Type: Article

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