Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures (Appl. Phys. Lett.(1986) 47 322 (229))

Applied Physics Letters

Volumn 49, Issue 4, 1986, Pages 229-

  People, R ^a   Bean, J C ^a  

^a LUCENT TECHNOLOGIES   (United States)

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EID: 2942678219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.97637     Document Type: Erratum

References (4)