Formation mechanism of the Si(1 1 1) 7 × 7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves

Surface Science

Volumn 526, Issue 3, 2003, Pages 219-229

  Shimada, Wataru ^a,b   Tochihara, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Growth; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography; Surface thermodynamics (including phase transitions)

Indexed keywords

ANNEALING; MORPHOLOGY; QUENCHING; SCANNING TUNNELING MICROSCOPY; STACKING FAULTS; SURFACE ROUGHNESS;

SEQUENTIAL SIZE CHANGE (SSC);

SILICON;

EID: 0037368091     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00004-9     Document Type: Article

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