Stabilization mechanism of Si(111) 7 × 7 domain growth: Important role of shared corner-holes

Surface Science

Volumn 491, Issue 1-2, 2001, Pages

  Shimada, Wataru ^a   Kato, Tomohiko ^b   Tochihara, Hiroshi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

Adatoms; Growth; Scanning tunneling microscopy; Surface energy; Surface thermodynamics (including phase transitions)

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; INTERFACIAL ENERGY; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; STABILIZATION;

ADATOMS; DAS DOMAIN; GROWTH;

SILICON;

EID: 0013229763     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01413-3     Document Type: Article

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