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Volumn 86, Issue 3, 2003, Pages 471-474

Elementary mechanisms behind the high-temperature deformation behavior of lutetium-doped silicon nitride

Author keywords

[No Author keywords available]

Indexed keywords

ANELASTIC RELAXATION; CREEP; DAMPING; DEFORMATION; GRAIN BOUNDARIES; HIGH TEMPERATURE PROPERTIES; LUTETIUM; MELTING; POLYCRYSTALLINE MATERIALS; SILICATES;

EID: 0037350589     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2003.tb03323.x     Document Type: Article
Times cited : (7)

References (16)
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  • 6
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  • 7
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    • H.-J. Kleebe and G. Pezzotti, "Mechanism of Grain-Boundary Wetting-Dewetting in z = 1 SiAlON Ceramics," J. Am. Ceram. Soc., 85 [2] 3049-53 (2002).
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    • Kleebe, H.-J.1    Pezzotti, G.2
  • 11
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    • Grain-boundary relaxation in high-purity silicon nitride
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.