Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy

Semiconductors

Volumn 36, Issue 11, 2002, Pages 1294-1298

  Cirlin, G E ^a,b,c   Egorov, V A ^a,b,c   Sokolov, ^c,d   Werner, P ^d  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036857289     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1521233     Document Type: Article

References (11)

1. N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].
2. D. Bimberg, M. Grundmann, and N.N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1998).
3. G.E. Cirlin, G.M. Guryanov, A.O. Golubok, et al., Appl. Phys. Lett. 67, 97 (1995).
4. G.É. Tsyrlin, V.N. Petrov, S.A. Masalov, and A.O. Golubok, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 733 (1999) [Semiconductors 33, 677 (1999)].
5. J. Tersoff, C. Teichert, and M.G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
6. O.G. Schmidt, N.Y. Jin-Phillipp, C. Lange, et al., Appl. Phys. Lett. 77, 4139 (2000).
7. D.D. Chambliss, R.J. Wilson, and S. Chiang, Phys. Rev. Lett. 66, 1721 (1991).
8. G.É. Cirlin, P. Werner, G. Gösele, et al., Pis'Ma Zh. Tekh. Fiz. 27 (1), 31 (2001) [Tech. Phys. Lett. 27, 14 (2001)].
9. O.P. Pchelyakov, Yu.B. Bolkhovityanov, A.V. Dvurechenskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].
10. A. Madhukar, Surf. Sci. 132, 344 (1983).
11. P. Smilauer, Vacuum 50, 115 (1998).