Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 583-587

  Sukach, G A ^a   Smertenko, P S ^a   Shepel, L G ^a   Ciach, R ^b   Kuzma, M ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b Pol Found for the Devmt Mat Sci   (Poland)

^c UNIVERSITY OF RZESZÓW   (Poland)

Author keywords

Heterostructure; III V semiconductor; Photodetector; Spectral sensitivity

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; DIFFUSION; GALLIUM NITRIDE; PHOTODETECTORS; PHOTOSENSITIVITY; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS;

SPECTRAL SENSITIVITY;

HETEROJUNCTIONS;

EID: 0037343644     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00418-5     Document Type: Conference Paper

References (6)

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