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Applied Physics A: Materials Science and Processing

Volumn 76, Issue 3, 2003, Pages 313-317

Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation

(7) Hamza, A V a Newman, M W a Thielen, P A a Lee, H W H a Schenkel, T a,b McDonald, J W a Schneider, D H a

a LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ENERGY GAP; EXCITONS; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PHONONS; PHOTOLUMINESCENCE; SURFACE STRUCTURE;

BAND GAP; EXCITON DISPERSION; PHONON SCATTERING; ULTRA-FAST ELECTRONIC EXCITATION;

SEMICONDUCTING SILICON;

EID: 0037339737 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1814-9 Document Type: Article

Times cited : (2)

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