Oxidation of porous 4H-SiC substrates

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1113-1116

  Soloviev, S ^a   Das, T ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Atomic force microscopy; Oxidation; Porous layer

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; OXIDATION; PHOTOLITHOGRAPHY; SILICON CARBIDE; HYDROGEN; POROUS MATERIALS; SUBSTRATES;

4H-SIC SUBSTRATE; C-FACE SIC; HF ETCHING; OXIDATION RATES; OXIDE GROWTH; PHOTOLITHOGRAPHIC PROCESS; POROUS LAYERS; SI FACES; POROUS SUBSTRATES;

SUBSTRATES; SILICON CARBIDE;

EID: 0036430463     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1113     Document Type: Conference Paper

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