Wavelength dependent characteristics of high-speed metamorphic photodiodes

IEEE Photonics Technology Letters

Volumn 15, Issue 2, 2003, Pages 281-283

  Jang, J H ^a   Cueva, G ^a   Sankaralingam, R ^b   Fay, P ^b   Hoke, W E ^c   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

GaAs; Metamorphic; Photodiodes

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; ENERGY GAP; HETEROJUNCTIONS; LASER APPLICATIONS; LIGHT MEASUREMENT; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DOUBLE HETEROJUNCTION PHOTODIODES; INDIUM ALUMINUM ARSENIDE; LASER ILLUMINATION; METAMORPHIC GROWTH TECHNOLOGY; METAMORPHIC PHOTODIODES;

PHOTODIODES;

EID: 0037320487     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.806886     Document Type: Article

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