Release of epitaxial layers grown on InAs substrates

Electrochemical and Solid-State Letters

Volumn 6, Issue 2, 2003, Pages

  Song, L ^a   Degroote, S ^a   Choi, K H ^a   Borghs, G ^a   Heremans, P ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ETCHING; GRAFTING (CHEMICAL); HYDROCHLORIC ACID; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; THIN FILMS; VAN DER WAALS FORCES;

EPITAXIAL LAYERS; GALLIUM ANTIMONIDE; INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037320021     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1536543     Document Type: Article

References (10)

1. E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Appl. Phys. Lett., 51, 2222 (1987).
2. A. Yi-Yan, W. K. Chan, C. K. Nguyen, T. J. Gmitter, R. Bhat, and J. L. Jackel, Electron. Lett., 27, 87 (1991).
3. A. Wilk, M. El Gazouli, M. El Skouri, P. Christol, P. Grech, A. N. Baranov, and A. Joullié, Appl. Phys. Lett., 77, 2298 (2000).
4. X. Y. Gong, H. Kan, T. Makino, T. Yamaguchi, T. Nakatskasa, M. Kumagawa, N. L. Rowell, A. Wang, and R. Rinfret, Cryst. Res. Technol., 30, 603 (1995).
5. Tl. Voronina, T. S. Lagunova, M.P. Mikhailova, K. D. Moiseev, and Yu. P. Yakovlev, Semiconductors, 30, 523 (1996).
6. J. Fastenau, E. Özbay, G. Tuttle, and F. Laabs, J. Electron. Mater., 24, 757 (1995).
7. R. Zhu, M. C. Hargis, J. M. Woodall, and M. R. Melloch, IEEE Photonics Technol. Lett., 13, 103 (2001).
8. A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. A. Szmulowioz, Appl. Phys. Lett., 77, 2400 (2000).
9. R. Windisch, C. Rooman, B. Dutta, A. Knobloch, G. Borghs, G. H. Döhler, and P. Heremans, IEEE J. Sel. Top. Quantum Electron., 8, 248 (2001).
10. K. J. Weber, A. W. Blakers, and K. R. Catchpole, Appl. Phys. A: Mater. Sci. Process., 69, 195 (1999).