Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact

IEEE Photonics Technology Letters

Volumn 13, Issue 2, 2001, Pages 103-105

  Zhu, R ^a,b   Hargis, M C ^a,b   Woodall, J M ^a,c   Melloch, M R ^a,b  

^a IEEE   (United States)

^b PURDUE UNIVERSITY   (United States)

^c Yale University   (United States)

Author keywords

Light emitting diode; Optical communications; Resonant cavity; Tunnel diode

Indexed keywords

BRAGG REFLECTORS;

BANDWIDTH; CAVITY RESONATORS; MIRRORS; OPTICAL COMMUNICATION; TUNNEL DIODES;

LIGHT EMITTING DIODES;

EID: 0035246522     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.910502     Document Type: Article

References (8)

1. Temperature and modulation characteristics of resonant-cavity light-emitting diodes
2. Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends
3. High brightness visible (660 nm) resonant-cavity light-emitting diode
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5. 3.2 μm infrared resonant cavity light emitting diode
6. Resonant cavity light emitting diode and detector using epitaxial liftoff
7. GHz bandwidth GaAs light-emitting diodes
8. Use of nonstoichiometry to form GaAs tunnel junctions