Electrical properties of (1 - x)Ta2O5-xTiO2 crystalline thin films prepared by metalorganic decomposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1431-1432

  Salam, K M A ^a   Konishi, H ^a   Mizuno, M ^a   Fukuda, H ^a   Nomura, S ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Insulating material; Metal insulator semiconductor structure; Tantalum oxide; Thin dielectric film

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CURRENT DENSITY; DECOMPOSITION; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; FILM PREPARATION; INSULATING MATERIALS; LEAKAGE CURRENTS; TANTALUM COMPOUNDS;

METALORGANIC DECOMPOSITION (MOD);

THIN FILMS;

EID: 0035271303     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1431     Document Type: Article

References (8)