The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 1011-1018

  Fahy, M ^a   Vaccaro, P ^b   Fujia, K ^b   Takahashi, M ^b   Zhang, X M ^a   Joyce, B A ^a   Watanabe, T ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344283262     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00142-5     Document Type: Article

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