MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates

Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 192-197

  Fahy, M R ^a,b   Zhang, X M ^a   Tok, E S ^a   Neave, J H ^a   Vaccaro, P ^b   Fujita, K ^b   Takahashi, M ^b   Watanabe, T ^b   Sato, K ^c   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Growth on (111)A oriented GaAs; Molecular beam epitaxy; Strained layer heteroepitaxy

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; FILM GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE STRUCTURE;

STRAINED LAYER HETEROEPITAXY;

SEMICONDUCTING FILMS;

EID: 0031224616     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00100-4     Document Type: Article

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