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Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

A study on oxidation behavior of poly-Si1-xGex films

(11) Kang, H B a Lee, J H a Yang, C W a Kang, S K b Min, B K b Ko, D H b Ahn, T H c Yeo, I S c Lee, K C c Lee, T W d Lee, Y H d

a Sungkyunkwan University (South Korea)

b Yonsei University (South Korea)

c Hynix Semiconductor Inc (South Korea)

d Ju Sung Engineering Co Ltd (South Korea)

Author keywords

Oxidation; Silicon Germanium; TEM

Indexed keywords

EID: 0037306799 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (1)

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