FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si:H photodiode

Microelectronics Reliability

Volumn 43, Issue 2, 2003, Pages 189-193

  Estrada, M ^a   Afzalian, A ^b   Flandre, D ^b   Cerdeira, A ^a   Baez, H ^a   De Lucca, A ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b Laboratoire de Microelectronique   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITORS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FABRICATION; LIGHTING; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

BULK DEVICES;

PHOTODIODES;

EID: 0037304018     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00288-3     Document Type: Conference Paper

References (4)

1. Benthien S, Tarek L, Schneider B, Wagner M, Verhoeven M, Bohm M. Vertically integrated sensors for advanced imaging applications. 25th European Solid-State Circuit Conference (ESSCIRC) 99, Duisburg, Germany, 21-23 October 1999.
2. Flandre D., Adransen S., Akheyar A., Crahay A., Demus L., Delatte P.et al. Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. Solid-State Electron. 45:2001;541.
3. 2. Thin Solid Films. 373:2000;176.
4. Cerdeira A., Estrada M. Modeling of reverse current behavior in amorphous thin and thick p-i-n diodes. IEEE Trans. ED. 41(11):2000;2338.