Enhanced Raman scattering in the near field of a scanning tunneling tip - An approach to single molecule Raman spectroscopy

Electrochemistry

Volumn 71, Issue 2, 2003, Pages 114-116

  Klein, S ^a   Geshev, P ^b   Witting, T ^a   Dickmann, K ^a   Hietschold, M ^c  

^a UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b KUTATELADZE INSTITUTE OF THERMOPHYSICS   (Russian Federation)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

BEM; Field Enhancement; SERS; STM

Indexed keywords

ATOMIC FORCE MICROSCOPY; BOUNDARY ELEMENT METHOD; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; FLUORESCENCE; PERMITTIVITY; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY;

FIELD ENHANCEMENT FACTOR (FEF); SURFACE ENHANCED RAMAN SPECTROSCOPY (SERS);

RAMAN SCATTERING;

EID: 0037300770     PISSN: 13443542     EISSN: None     Source Type: Journal    
DOI: 10.5796/electrochemistry.71.114     Document Type: Article

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