Investigation of the GaAs-pyramids overgrowth using MOCVD

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 417-420

  Gregusova D ^a   Cambel, V ^a   Kudela R ^a   Soltys J ^a   Kostie I ^b   Attolini, G ^c   Pelosi, C ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF INFORMATICS   (Slovakia)

^c CNR   (Italy)

Author keywords

A1. Atomic force microscopy; A1. Etching; A1. Roughening; A1. Surfaces; A3. Metalorganic vapor phase epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

WET-CHEMICAL ETCHING;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037292347     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01850-X     Document Type: Conference Paper

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