Natural convection in a liquid-encapsulated molten semiconductor with a steady magnetic field

International Journal of Heat and Fluid Flow

Volumn 24, Issue 1, 2003, Pages 130-136

  Kuniholm, Jonathan F ^a   Ma, Nancy ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; BUOYANCY; ELECTROMAGNETISM; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS;

TEMPERATURE GRADIENT;

NATURAL CONVECTION;

ELECTRICAL CONDUCTIVITY; MAGNETIC FIELD; NATURAL CONVECTION; SEMICONDUCTOR; VELOCITY;

EID: 0037292149     PISSN: 0142727X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0142-727X(02)00205-9     Document Type: Article

References (12)

1. Natural convection heat transfer in a rectangular enclosure with a transverse magnetic field
2. MLEK crystal growth of large diameter (1 0 0) indium phosphide
3. Coupling of buoyant convections in boron oxide and a molten semiconductor in a vertical magnetic field
4. Buoyancy driven convection in a rectangular enclosure with a transverse magnetic field
5. Dopant transport during semiconductor crystal growth. Axial versus transverse magnetic fields
6. Melt motion in a Czochralski crystal puller with an axial magnetic field: Motion due to buoyancy and thermocapillarity
7. Inertia and thermal convection during crystal growth with a steady magnetic field
8. Forced convection during liquid encapsulated crystal growth with an axial magnetic field
9. Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field
10. The effect of the direction of the external magnetic field on the three-dimensional natural convection in acubical enclosure
11. Growth of floating zone (FZ) silicon crystals under the influence of a transversal magnetic field
12. Convective mass transport during bulk growth of semiconductor crystals with steady magnetic fields