Dopant transport during semiconductor crystal growth axial versus transverse magnetic fields

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 554-572

  Hirtz, J M ^a   Ma, N ^a  

^a MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MAGNETOHYDRODYNAMICS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

DOPANT TRANSPORT; LATERAL SEGREGATION; MAGNETIC FIELD ORIENTATION;

SEMICONDUCTOR GROWTH;

EID: 0033890681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00815-5     Document Type: Article

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