Anisotropy in transport properties of ordered strained InGaP

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 369-374

  Hasenohrl S ^a   Novak J ^a   Kudela R ^a   Betko, J ^a   Morvic, M ^a   Fedor, J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

A1. Crystal structure; A1. Transport properties; A3. Organometallic vapor phase epitaxy; B2. Semiconducting ternary compounds

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSPORT PROPERTIES;

SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037291266     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01873-0     Document Type: Conference Paper

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