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Volumn 47, Issue 2, 2003, Pages 291-295

A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0037290296     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00209-5     Document Type: Conference Paper
Times cited : (6)

References (8)
  • 1
    • 0031377737 scopus 로고    scopus 로고
    • Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for λ=808 and 980 nm
    • Razeghi M., Yi H., Kim S., Erdtman M. Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for. λ=808 and 980 nm SPIE. 3001:1997;243.
    • (1997) SPIE , vol.3001 , pp. 243
    • Razeghi, M.1    Yi, H.2    Kim, S.3    Erdtman, M.4
  • 2
    • 0031098839 scopus 로고    scopus 로고
    • Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers
    • Zhang G., Ovtchinnikov A., Pessa M., Asonen H. Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers. Electron. Lett. 33(6):1997;489.
    • (1997) Electron Lett , vol.33 , Issue.6 , pp. 489
    • Zhang, G.1    Ovtchinnikov, A.2    Pessa, M.3    Asonen, H.4
  • 3
    • 0031371920 scopus 로고    scopus 로고
    • High power high efficiency 0.98 μ m wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
    • Gokhale M.R., Christopher Dries J., Forrest S.R., Garbuzov D.Z. High power high efficiency 0.98. μ m wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy IEEE J. Quant. Electron. 33(12):1997;2266-2276.
    • (1997) IEEE J Quant Electron , vol.33 , Issue.12 , pp. 2266-2276
    • Gokhale, M.R.1    Christopher Dries, J.2    Forrest, S.R.3    Garbuzov, D.Z.4
  • 4
    • 0034217323 scopus 로고    scopus 로고
    • Design consideration and performance of high-power and high brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers
    • Yang G.W., Hwe R.J., Xu Z.T., Ma X.Y. Design consideration and performance of high-power and high brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers. IEEE J. Select. Top. Quant. Electron. 6(4):2000;577.
    • (2000) IEEE J Select Top Quant Electron , vol.6 , Issue.4 , pp. 577
    • Yang, G.W.1    Hwe, R.J.2    Xu, Z.T.3    Ma, X.Y.4
  • 5
    • 0003911155 scopus 로고
    • Cross Light Inc software
    • LASTIP user's manual Ver 3.5, by Cross Light Inc software, 1995. Available from: 〈 http://www.crosslight.ca 〉.
    • (1995) LASTIP user's manual Ver 3.5
  • 8
    • 0033601557 scopus 로고    scopus 로고
    • Carrier nonuniformity effects on the internal efficiency of multiquantum well lasers
    • Piprek J., Abraham P., Bowers Joachim Carrier nonuniformity effects on the internal efficiency of multiquantum well lasers. Appl. Phys. Lett. 74(4):1999;489-491.
    • (1999) Appl Phys Lett , vol.74 , Issue.4 , pp. 489-491
    • Piprek, J.1    Abraham, P.2    Joachim, B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.