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Volumn 24, Issue 2, 2001, Pages 225-229
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A detailed model for defect concentration and dopant activation in GaAs
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Author keywords
Defects; Dopant activation; GaAs; Semi insulating
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Indexed keywords
ANNEALING;
DOPING (ADDITIVES);
ION IMPLANTATION;
MATHEMATICAL MODELS;
SEMICONDUCTING GALLIUM ARSENIDE;
STOICHIOMETRY;
CRYSTAL STOICHIOMETRY;
CRYSTAL DEFECTS;
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EID: 0035302861
PISSN: 02504707
EISSN: None
Source Type: Journal
DOI: 10.1007/bf02710106 Document Type: Article |
Times cited : (3)
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References (9)
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