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Volumn 24, Issue 2, 2001, Pages 225-229

A detailed model for defect concentration and dopant activation in GaAs

Author keywords

Defects; Dopant activation; GaAs; Semi insulating

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

EID: 0035302861     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02710106     Document Type: Article
Times cited : (3)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.