Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique

Review of Scientific Instruments

Volumn 74, Issue 1 II, 2003, Pages 550-552

  Fukuyama, A ^a   Ohno, R ^a   Akashi, Y ^a   Ikari, T ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; PIEZOELECTRICITY; SPECTROSCOPIC ANALYSIS;

NONRADIATIVE RECOMBINATION PROCESSES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037283865     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515888     Document Type: Conference Paper

References (5)

1. T. Ikari and A. Fukuyama, Progress in Photothermal and Photoacoustic Science and Technology, Volume IV: Semiconductors and Electronic Materials, edited by A. Mandelis and P. Hess (SPIE, Washington, DC, 2000), p. 57.
2. A. Fukuyama, Y. Akashi, K. Yoshino, K. Maeda, and T. Ikari, Phys. Rev. B 58, 12868 (1998).
3. A. Fukuyama, H. Fukuhara, S. Tanaka, A. A. Memon, K. Sakai, Y. Akashi, and T. Ikari, J. Appl. Phys. 90, 4385 (2001).
4. D. M. Todorović, P. M. Nikolić, and A. I. Bojičić, J. Appl. Phys. 85, 7716 (1999).
5. Y. Tokuda, K. Kamiya, and T. Okumura, J. Cryst. Growth 210, 260 (2000).