Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopy

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 260-263

  Tokuda, Y ^a   Kamiya, K ^a   Okumura, T ^b  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; HYDROGEN; SPECTROSCOPIC ANALYSIS;

CONSTANT-CAPACITANCE-VOLTAGE TRANSIENT SPECTROSCOPY (CCVTS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033903592     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00692-2     Document Type: Article

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