Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 194-198

  Berezovets, V A ^a,b   Mikhailova, M P ^a   Moiseev, K D ^a   Parfeniev, R V ^a   Yakovlev, Yu P ^a   Nizhankovskii, V I ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INTERNATIONAL LABORATORY OF HIGH MAGNETIC FIELDS AND LOW TEMPERATURES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETORESISTANCE; METALLOIDS; OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM OSCILLATIONS;

HETEROJUNCTIONS;

EID: 0037277840     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306295     Document Type: Conference Paper

References (6)

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