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Volumn 3, Issue 7-8, 1999, Pages 417-423

Point-defect associated thermionic hole emissions from p-type Si/Si1-xGex/Si quantum well structures

Author keywords

Deep level transient spectroscopy; Hole emission; Molecular beam epitaxy growth; Point defect; SiGe quantum well

Indexed keywords


EID: 0033464898     PISSN: 14328488     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100080050176     Document Type: Article
Times cited : (2)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.