Simulation of the distribution of incident ions and depth profile in plasma-based ion implanted layers with different pulse width

Modelling and Simulation in Materials Science and Engineering

Volumn 11, Issue 1, 2003, Pages 1-9

  Qi, Sun ^a   Xinxin, Ma ^a   Lifang, Xia ^a   Mingren, Sun ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CALCULATIONS; COMPOSITION; COMPUTER SIMULATION; LASER PULSES; NITROGEN; PLASMA SHEATHS; SILICON WAFERS; SURFACES;

PLASMA BASED ION IMPLANTED LAYERS; SHEATH EXPANSION;

ION IMPLANTATION;

EID: 0037251151     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/11/1/301     Document Type: Article

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