Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy

Physica B: Condensed Matter

Volumn 325, Issue , 2003, Pages 41-45

  Li, Shuwei ^a   Koike, Kazuto ^b   Yano, Mitsuaki ^b   Jin, Yixin ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Deep level transient spectroscopy; Optical properties; Photoluminescence; Self assembled quantum dots

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; HOLE TRAPS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037212549     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01427-8     Document Type: Article

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