Enhancement of hole injection for nitride-based light-emitting devices

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 169-171

  Komirenko, S M ^a   Kim, K W ^a   Kochelap, V A ^b   Zavada, J M ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Enhanced hole concentration; Group III nitride; Hole injection; Superlattice; UV emitter

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; LIGHT EMISSION; NITRIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; ULTRAVIOLET RADIATION;

HOLE INJECTION CURRENTS;

LIGHT EMITTING DIODES;

EID: 0037211068     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00314-3     Document Type: Article

References (10)

1. Pearton S.J., Zolper J.C., Shu R.J., Ren R.J. GaN: Processing, defects, and devices. J. Appl. Phys. 86:1999;1-78.
2. 0.92N grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 65:1994;593-595.
3. Schubert E.F., Grieshabert W., Goepfert I.D. Enhancement of deep acceptor activation in semiconductors by superlattice doping. Appl. Phys. Lett. 69:1996;3737-3739.
4. 0.8N/GaN superlattices. Appl. Phys. Lett. 74:1999;3681-3683.
5. 0.85N/GaN superlattice. Electron. Lett. 22:2001;160-162.
6. Gribnikov Z.S., Hess K., Kosinsky G.A. Nonlocal and nonlinear transport in semiconductors. - real space-transfer effects J. Appl. Phys. 77:1995;1337-1373.
7. Luryi S. Light-emitting devices based on the real-space transfer of hot electrons. Appl. Phys. Lett. 58:1991;1727-1729.
8. Gaskill D.K., Rowland L.B., Doverspike K. Electrical transport properties of AlN, GaN and AlGaN. Edgar J. Properties of group III nitrides. EMIS data reviews series. vol. 11:1995;101-116.
9. Mitin V.V., Kochelap V.A., Stroscio M.A. Quantum heterostructures. 1999;Cambridge University Press, New York.
10. Oguzman I.H., Kolník J., Brennan K.F., Wang R., Fang T.-N., Ruden P.P. Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. J. Appl. Phys. 80:1996;4429-4436.